Please use this identifier to cite or link to this item:
https://ptsldigital.ukm.my/jspui/handle/123456789/457540| Title: | Pencirian SiO2 untuk fabrikasi transistor MOS. |
| Authors: | Sakina Farikhullah Khan |
| Issue Date: | 1997 |
| Call Number: | QD181.S6S24 1997 |
| Publisher: | UKM, Bangi |
| Appears in Collections: | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ukmvital_3034+ABSTRACT+ABSTRACT.0.PDF Restricted Access | 824.16 kB | Adobe PDF |  View/Open | |
| ukmvital_3034+Source+Source.0.PDF Restricted Access | 5.96 MB | Adobe PDF |  View/Open |
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