Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/457540
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dc.contributor.authorSakina Farikhullah Khan
dc.date.accessioned2023-09-12T09:10:52Z-
dc.date.available2023-09-12T09:10:52Z-
dc.date.issued1997
dc.identifier.otherukmvital:3034
dc.identifier.urihttps://ptsldigital.ukm.my/jspui/handle/123456789/457540-
dc.language.isomay
dc.publisherUKM, Bangi
dc.relationFaculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina
dc.rightsUKM
dc.titlePencirian SiO2 untuk fabrikasi transistor MOS.
dc.typetheses
dc.identifier.callnoQD181.S6S24 1997
Appears in Collections:Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina

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