Please use this identifier to cite or link to this item:
https://ptsldigital.ukm.my/jspui/handle/123456789/457540Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sakina Farikhullah Khan | |
| dc.date.accessioned | 2023-09-12T09:10:52Z | - |
| dc.date.available | 2023-09-12T09:10:52Z | - |
| dc.date.issued | 1997 | |
| dc.identifier.other | ukmvital:3034 | |
| dc.identifier.uri | https://ptsldigital.ukm.my/jspui/handle/123456789/457540 | - |
| dc.language.iso | may | |
| dc.publisher | UKM, Bangi | |
| dc.relation | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina | |
| dc.rights | UKM | |
| dc.title | Pencirian SiO2 untuk fabrikasi transistor MOS. | |
| dc.type | theses | |
| dc.identifier.callno | QD181.S6S24 1997 | |
| Appears in Collections: | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ukmvital_3034+ABSTRACT+ABSTRACT.0.PDF Restricted Access | 824.16 kB | Adobe PDF | ![]() View/Open | |
| ukmvital_3034+Source+Source.0.PDF Restricted Access | 5.96 MB | Adobe PDF | ![]() View/Open |
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