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Title:	Fabrication of cadmium zinc telluride alloy thin film solar cells grown by thermal evaporation
Authors:	F M Tahzib Enam (P83769)
Supervisor:	Nowshad Amin, Prof. Dr.
Keywords:	Photovoltaic power generation
Issue Date:	14-May-2018
Description:	Cadmium Zinc Telluride (CdZnTe) ternary alloy material has drawn considerable attention because of modifying their properties as per requirements in the field of optoelectronic device fabrication. CdZnTe (CZT) has a direct optimal band gap from 1.45 eV to 2.26 eV and higher absorption coefficient than CdTe (α > 5x105 cm-1). So, in photovoltaic application, it can act as a promising alternative of CdTe solar cells, but CZT is recognized for top cell in tandem solar cell applications. Hence, this research focuses on the possibility of Cadmium Sulfide / Cadmium Zinc Telluride (CdS/CZT) solar cells fabrication, considering the prospective growth of p-type CZT absorber layer deposited by thermal evaporation method. The novelty of this research is to deposit effective CZT absorber layer with the mixture of (Cd, Zn and Te) three elemental powders. The entire work is formulated by three distinct objectives such as numerical analysis, CZT absorber growth optimization with associated Zinc Chloride (ZnCl2) post deposition treatment and complete CdS/CZT solar cells fabrication. A study of numerical modeling on the effect of CZT absorber layer thickness in cell performance has been carried out by using “Solar Cell Capacitance Simulator” (SCAPS-1D). The simulation results revealed that 2 µm thickness of CZT layer is sufficient to absorb more incident photons. SCAPS-1D has shown promising result of CZT with conversion efficiency of 23.62 % (VOC = 1.03 V, JSC = 38.52 mA/cm2, and FF = 58.96). In practical fabrication, thermal evaporator which is a physical vapor deposition (PVD) technique has been used to deposit CZT absorber layer on top of borosilicate glass in different deposition current. After that, the CZT absorber layer is annealed with inert gas argon (Ar) to make it semiconductor because as deposited CZT is metallic due to elemental Cadmium (Cd) and Tellurium (Te). ZnCl2 post deposition treatment helps to make the semiconductor p-type and regulate the compositions between Cd and Zn as well. Characterization techniques such as, XRD, UV-VIS, FESEM, EDX, Hall Effect Measurement etc. has been done for the deposited CZT absorber layer. From the characterization results, deposition current 28A has been optimized by thermal evaporation for further annealing process. Afterwards, 500ºC with time 45 mins for Ar annealing and 400ºC with annealing time 15 mins at 0.4 mole for ZnCl2 solution treatment have been augmented also to get non-stochiometric zinc rich composition Cd0.4Zn0.6Te which is acceptable as absorber layer in order of optoelectronic properties. The conversion efficiency of CZT solar cell grow by thermal evaporation is 0.09% (VOC= 0.26 V, JSC= 1.17 mA/cm2 & FF=29.73) associated with ZnCl2 post deposition treatment.,Certification of Master's/Doctoral Thesis" is not available
Pages:	134
Call Number:	TK1087.E533 2018 3 tesis
Publisher:	UKM, Bangi
Appears in Collections:	Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina

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