Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/486898
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dc.contributor.advisorNowshad Amin, Prof. Dr.-
dc.contributor.authorKazi Sajedur Rahman (P80398)-
dc.date.accessioned2023-10-11T02:26:22Z-
dc.date.available2023-10-11T02:26:22Z-
dc.date.issued2018-04-01-
dc.identifier.otherukmvital:100866-
dc.identifier.urihttps://ptsldigital.ukm.my/jspui/handle/123456789/486898-
dc.descriptionCadmium Telluride (CdTe) has long been recognized as a leading thin film photovoltaic material due to its nearly ideal direct band gap of 1.45 eV with high absorption coefficient (up to 105cm-1) for sun's radiation spectrum in the visible range, thus facilitating the practical realization of solar cell structure with thin absorber layers (1-2 μm). Cadmium Sulfide (CdS) has been the most suitable and extensively studied window material for CdTe solar cells to date. Hence, CdS thin layer has been deposited by Metal Organic Chemical Vapor Deposition (MOCVD) and RF magnetron sputtering technique and comparative study of both processes has also been explored. There are various methods to deposit CdTe thin film which includes close-spaced sublimation (CSS), vapor transport deposition (VTD) and electrodeposition (ED). The deposition technique of CdTe absorber layer employed in is CSS because it is one of the most cost-efficient, high throughput semiconductor coating techniques which offers high deposition rate and industrial scalability as well. Additionally, CSS involves higher growth temperature which enhances the deposition rate and also determines the quality of junction formation. Therefore, major emphasize has been given on CdTe thin film property evolution with various CSS process parameters such as source and substrate temperature, deposition pressure and deposition time. By controlling the deposition time and temperature profile in steps, thickness of CdTe film is controlled from 1 μm to 5 μm without any pinholes in order to improve the performance through controlling the carrier recombination loss throughout the CdTe layer. Furthermore, effect of post-deposition Cadmium Chloride (CdCl2) treatment has also been inspected elaborately to improve the electronic property of CdTe absorber layer. The grown films are investigated by all possible means of thin film characterization like X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), Energy-dispersive X-ray Spectroscopy (EDX), Ultraviolet-visible (UV-Vis) Spectroscopy and Hall Effect measurement system to find its usage in thin film solar cells. The complete solar cells have been fabricated with the structure of FTO/CdS/CdTe/C:Cu/Ag and characterized by standard Light Current Voltage (LIV) tester. Preliminary CdTe solar cell demonstrates the conversion efficiency of 2.5% for 3 μm thick CdTe films grown by CSS. After a rigorous optimization in post-deposition treatment and back electrode formation annealing profiles, conversion efficiency of 5.52% with the performance parameters of Voc = 0.64 V, Jsc = 18.2 mA/cm2 and FF = 0.474 has been achieved as the best value to date.,Certification on Master's/Doctoral Thesis" is not available-
dc.language.isoeng-
dc.publisherUKM, Bangi-
dc.relationFaculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina-
dc.rightsUKM-
dc.subjectCadmium Telluride-
dc.subjectThin films-
dc.titleFabrication of CdTe thin film solar cells by close-spaced sublimation technique-
dc.typeTheses-
dc.format.pages136-
dc.identifier.callnoQD181.T4R334 2018 3 tesis-
dc.identifier.barcode003422(2018)-
Appears in Collections:Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina

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