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Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/486775
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dc.contributor.authorUda Hashim
dc.date.accessioned2023-10-11T02:25:26Z-
dc.date.available2023-10-11T02:25:26Z-
dc.date.issued2001
dc.identifier.otherukmvital:116
dc.identifier.urihttps://ptsldigital.ukm.my/jspui/handle/123456789/486775-
dc.language.isomay
dc.publisherUKM, Bangi
dc.relationFaculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina
dc.rightsUKM
dc.subjectSemiconductors
dc.subjectSilicides
dc.titlePenyediaan dan pencirian C54 TiSi2 untuk proses silisida litar bersepadu CMOS.
dc.typeTheses
dc.identifier.callnoTK7874.U32 2001
Appears in Collections:Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina

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