Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/587466
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dc.contributor.authorGoh Boon Tong-
dc.contributor.authorSaadah Abdul Rahman-
dc.contributor.authorSiti Meriam Ab. Gani-
dc.date.accessioned2023-11-06T08:59:03Z-
dc.date.available2023-11-06T08:59:03Z-
dc.date.issued2008-
dc.identifier.issn0126-6039-
dc.identifier.otherukmvital:12465-
dc.identifier.urihttps://ptsldigital.ukm.my//jspui/handle/123456789/587466-
dc.language.isoen-
dc.publisherPenerbit UKM-
dc.relation.haspartSains Malaysiana-
dc.relation.urihttp://journalarticle.ukm.my,http://www.ukm.my/jsm/-
dc.subjectCrystallite size-
dc.subjectFTIR-
dc.subjectnc-Si:H-
dc.subjectXRD-
dc.titleCrystallinity and Si-H Bonding Configuration of nc-Si:H Films Grown by Layer-by-layer (LBL) Deposition Technique at Different RF Power-
dc.typeJournal Article-
dc.identifier.callnoSiri Q1.S23-
Appears in Collections:UKM Journal Article / Artikel Jurnal UKM

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