Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/587090
Title: Comparison Analysis on Scaling the Vertical and LateralNMOSFET in Nanometer Regime
Authors: Ima Sulaiman
Ismail Saad
Razali Ismail
Keywords: DIBL
Double-gate
Surrounding-gate
Vertical MOSFET
Issue Date: 2008
News Source: Sains Malaysiana
ISSN: 0126-6039
Call Number: Siri Q1.S23
Publisher: Penerbit UKM
Appears in Collections:UKM Journal Article / Artikel Jurnal UKM

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