Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/586694
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dc.contributor.authorBahram Azizollah Ganji-
dc.contributor.authorBurhanuddin Yeop Majlis-
dc.date.accessioned2023-11-06T08:42:39Z-
dc.date.available2023-11-06T08:42:39Z-
dc.date.issued2009-
dc.identifier.issn0126-6039-
dc.identifier.otherukmvital:11870-
dc.identifier.urihttps://ptsldigital.ukm.my//jspui/handle/123456789/586694-
dc.language.isoen-
dc.publisherPenerbit UKM-
dc.relation.haspartSains Malaysiana-
dc.relation.urihttp://journalarticle.ukm.my,http://www.ukm.my/jsm/-
dc.subjectAlmask-
dc.subjectdeep trench-
dc.subjectdeep trenches ion etching-
dc.subjectetch rate-
dc.subjectsilicon structure-
dc.titleFabrication of deep trenches in silicon wafer using deep reactive ion etching with aluminium mask-
dc.typeJournal Article-
dc.identifier.callnoSiri Q1.S23-
Appears in Collections:UKM Journal Article / Artikel Jurnal UKM

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