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Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/475079
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dc.contributor.authorKhairul Nisha Mohd. Kharuddin-
dc.date.accessioned2023-10-05T06:37:22Z-
dc.date.available2023-10-05T06:37:22Z-
dc.date.issued2006-
dc.identifier.otherukmvital:1883-
dc.identifier.urihttps://ptsldigital.ukm.my/jspui/handle/123456789/475079-
dc.language.isomay-
dc.publisherUKM, Bangi-
dc.relationFaculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina-
dc.rightsUKM-
dc.subjectField effect transistors-
dc.subjectHeterojunctions-
dc.subjectNanostructures-
dc.titleKajian tentang ciri-ciri elektrik transistor elektron kelincahan tinggi pseudomorfik (PHEMT) dalam regim nano-
dc.typeTheses-
dc.identifier.callnoTK7871.95.K493 2006-
Appears in Collections:Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina

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