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Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/457751
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dc.contributor.advisorNowshad Amin, Assoc. Prof. Dr.-
dc.contributor.authorNur Radhwa Hamzah (P49919)-
dc.date.accessioned2023-09-12T09:12:53Z-
dc.date.available2023-09-12T09:12:53Z-
dc.date.issued2012-05-11-
dc.identifier.otherukmvital:120393-
dc.identifier.urihttps://ptsldigital.ukm.my/jspui/handle/123456789/457751-
dc.descriptionIn polycrystalline photovoltaic cells such as CdTe and CIGS, cadmium sulphide (CdS) is used as buffer layer or window layer (n-type). Among the several n-type semiconductor materials, it has been observed that CdS is the most promising heterojunction material for polycrystalline photovoltaic materials of CdTe and CIGS. There are several methods to deposit CdS. In this study,deposition of CdS by novel low cost Metal Organic Chemical Vapor Deposition (MOCVD) method is successfully introduced. Moreover, deposition of CdS by Chemical Bath Deposition (CBD) and RF Magnetron Sputtering are investigated. Conventional method of deposition by MOCVD in the MOCVD deposition chamber; deposition occurs in vacuum condition and need flow of gas during deposition. However, low cost MOCVD method, there is no needs of any expensive chamber with vacuum condition during deposition. The deposition occurs at atmospheric pressure without any vacuum condition and without any flow of gas. In this research, comparison has been done to compare the properties of CdS deposited by the novel low cost MOCVD, sputtering and CBD. CdS thin film deposited by CBD has moderate transmission at 75% with band gap energy at 2.41eV, grain size of 0.176μm and surface roughness of 26.867 nm. CdS thin film deposited by sputtering has transmission from 85% with band gap energy at 2.39eV, grain size of 0.165μm and surface roughness of 5.690 nm. CdS thin film grown by low cost MOCVD has the highest and transmission at 85% with band gap energy at 2.46 eV, larger grain size of 0.235 μm and surface roughness of 19.872 nm. From the XRD, it shows that CdS thin film deposited by sputtering is highly quality polycrystalline where it has (111) cubic phase, while CdS film by low cost MOCVD and CBD are polycrystalline which have preferential orientation at plane (100), (111) cubic and (101). However, films deposited by MOCVD show clearer peak at all this plane comparing to CBD. Annealing treatment improved the crystalline properties of CdS deposited where it shows clearer peak at (111) cubic phase for all CdS film. Deposition of CdS by this novel low cost atmospheric pressure MOCVD has proven to have good properties with better transmission, larger grain size, pinhole free, polycrystalline structure and good surface morphology to be used in solar cell application.,Certification of Master's / Doctoral Thesis" is not available-
dc.language.isoeng-
dc.publisherUKM, Bangi-
dc.relationFaculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina-
dc.rightsUKM-
dc.subjectSolar cells-
dc.subjectCadmium sulfide-
dc.subjectUniversiti Kebangsaan Malaysia -- Dissertations-
dc.subjectDissertations, Academic -- Malaysia-
dc.titleGrowth of cadmium sulphide (CdS) thin film by novel low-cost metal organic chemical vapor deposition (MOCVD) for solar cell application-
dc.typetheses-
dc.format.pages102-
dc.identifier.callnoTK8330.N846 2012 3 tesis-
dc.identifier.barcode005350(2021)(PL2)-
Appears in Collections:Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina

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