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https://ptsldigital.ukm.my/jspui/handle/123456789/457575Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Nowshad Amin, Professor Dr. | |
| dc.contributor.author | Jamilah Husna (P48975) | |
| dc.date.accessioned | 2023-09-12T09:11:08Z | - |
| dc.date.available | 2023-09-12T09:11:08Z | - |
| dc.date.issued | 2013-08-30 | |
| dc.identifier.other | ukmvital:74661 | |
| dc.identifier.uri | https://ptsldigital.ukm.my/jspui/handle/123456789/457575 | - |
| dc.description | Buffer layer has been exploited on thin film solar cell in producing junction of absorber layer with minimum absorption. The role of absorber layer (n or p type) is to generate carriers from light absorbed on the electrode. Thus, it is important for the buffer layer to minimize the transmission or reflection losses of the absorber layer. Zinc oxide (ZnO) is one most popular choice of buffer layer for solar cells. In this thesis, investigations on ZnO thin films are focusing on their properties; structural, electrical and optical and its utilization in solar cell. A modification on fabrication of ZnO is optimized to obtain optimum solar cell performance. Here, Zinc oxide thin films were deposited by RF sputtering of ZnO target disk at room temperature with various thicknesses of 50 nm, 80 nm, 100 nm and 200 nm. The prepared samples then were annealed at different temperature of 250 oC, 350 oC and 400 oC for 30 minute. The average transmission for as-deposited and annealed ZnO thin film in ultraviolet region was around 90% and for visible light was 80%, while band gap (Eg) obtained in the range of 3.14 eV-3.25 eV for all films. The ZnO film that has been annealed at high temperature showed higher resistivity. Based on the characterization results, it was found that the optimized thickness of thin film ZnO for as deposited and annealed at 350 oC is 80 nm. ZnO thin films are incorporated as a buffer layers into two types of solar cell namely CIGS and CdTe. The best CIGS cell device performance that achieved in this work is the device with zinc oxide (ZnO) thin film 80 nm thick with efficiency of 5.4% and VOC = 0.59 V, FF = 0.66 % and JSC = 14.5 mA. Meanwhile, for CdTe device utilizing ZnO as buffer layer with thickness of 80 nm shows conversion efficiency of 4.29% with VOC = 0.48V, FF =0.72 % and JSC = 12.4 mA. The results showed the properties of ZnO thin films obtained in this study are promisingly acceptable to be utilized in solar cell application as buffer layers.,Master/Sarjana | |
| dc.language.iso | eng | |
| dc.publisher | UKM, Bangi | |
| dc.relation | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina | |
| dc.rights | UKM | |
| dc.subject | Physical vapour | |
| dc.subject | Buffer layers | |
| dc.subject | Solar cell application | |
| dc.subject | Solar cells | |
| dc.title | Study of physical vapour deposition grown ZnO buffer layers for solar cell application | |
| dc.type | theses | |
| dc.format.pages | 86 | |
| dc.identifier.callno | TK2960.J345 2013 3 | |
| dc.identifier.barcode | 000840 | |
| Appears in Collections: | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ukmvital_74661+Source01+Source010.PDF Restricted Access | 4.11 MB | Adobe PDF |  View/Open |
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