Please use this identifier to cite or link to this item:
https://ptsldigital.ukm.my/jspui/handle/123456789/457548Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Karim Mohammed Fakhrul | |
| dc.date.accessioned | 2023-09-12T09:10:55Z | - |
| dc.date.available | 2023-09-12T09:10:55Z | - |
| dc.date.issued | 1996 | |
| dc.identifier.other | ukmvital:3210 | |
| dc.identifier.uri | https://ptsldigital.ukm.my/jspui/handle/123456789/457548 | - |
| dc.language.iso | eng | |
| dc.publisher | UKM, Bangi | |
| dc.relation | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina | |
| dc.rights | UKM | |
| dc.title | Study of tunneling and breakdown mechanisms of gate oxide in MOSFET | |
| dc.type | theses | |
| dc.identifier.callno | 4 TK7871.95.K37 1996 | |
| Appears in Collections: | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ukmvital_3210+ABSTRACT+ABSTRACT.0.PDF Restricted Access | 665.56 kB | Adobe PDF |  View/Open | |
| ukmvital_3210+Source+Source.0.PDF Restricted Access | 4.6 MB | Adobe PDF |  View/Open |
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