Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/587090
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dc.contributor.authorIma Sulaiman-
dc.contributor.authorIsmail Saad-
dc.contributor.authorRazali Ismail-
dc.date.accessioned2023-11-06T08:50:46Z-
dc.date.available2023-11-06T08:50:46Z-
dc.date.issued2008-
dc.identifier.issn0126-6039-
dc.identifier.otherukmvital:12174-
dc.identifier.urihttps://ptsldigital.ukm.my//jspui/handle/123456789/587090-
dc.language.isoen-
dc.publisherPenerbit UKM-
dc.relation.haspartSains Malaysiana-
dc.relation.urihttp://journalarticle.ukm.my,http://www.ukm.my/jsm/-
dc.subjectDIBL-
dc.subjectDouble-gate-
dc.subjectSurrounding-gate-
dc.subjectVertical MOSFET-
dc.titleComparison Analysis on Scaling the Vertical and LateralNMOSFET in Nanometer Regime-
dc.typeJournal Article-
dc.identifier.callnoSiri Q1.S23-
Appears in Collections:UKM Journal Article / Artikel Jurnal UKM

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