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https://ptsldigital.ukm.my/jspui/handle/123456789/519515Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Saleem H.Zaidi, Prof. Dr. | - |
| dc.contributor.author | Suhaila Sepeai (P48883) | - |
| dc.date.accessioned | 2023-10-17T08:12:36Z | - |
| dc.date.available | 2023-10-17T08:12:36Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.other | ukmvital:76250 | - |
| dc.identifier.uri | https://ptsldigital.ukm.my/jspui/handle/123456789/519515 | - |
| dc.description | Bifacial solar cell is designed to simultaneously convert sunlight into electricity from its front and rear surfaces. Bifacial solar cell has become an active field of research with the aim of making silicon photovoltaic (PV) technology more competitive through enhanced efficiency and reduced material costs. This thesis reports on software simulation, fabrication and performance analysis of bifacial solar cells on boron-doped (p-type) wafers. Bifacial solar cell configuration consisted of front surface n-type emitter and back surface p+-doped electric field leading to n+pp+ structure. A working model of the n+pp+ bifacial solar cell was developed using PC1D simulation software. Simulations resulted in front surface efficiency of 16.42% and back surface efficiency of 14.18%. Simulation results demonstrated that minority carrier lifetime of the Si wafer was instrumental in achieving optimum performance of bifacial solar cell. In order to fabricate n+pp+ bifacial solar cell, a new combination of emitter and back surface field (BSF) layers was investigated. A liquid source phosphorous oxytrichloride (POCl3) solution was employed for emitter formation in a quartz furnace operating at 975 °C. For BSF formation, screen-printed Aluminum (Al) was used as the p+ dopant. Aluminum doping was achieved through a two-step process: (a) rapid thermal annealing of screen-printed Al at 850 °C and (b) removal of excess Al in hydrochloride solution at a temperature of 30 °C. This n+pp+ bifacial configuration was sandwiched between silicon nitride (SiN) films on both side to serve as anti-reflection and surface passivation films. Metal contacts to n and p+ regions were formed through screen printing of Argentum (Ag) and Argentum/Aluminum (Ag/Al) followed by rapid thermal annealing at 820 °C. This POCl3-diffusion and Al-BSF fabrication process led to bifacial solar cells with a front surface efficiency of 12.8% and back surface efficiency of 5.08%. Bifacial solar cell performance analysis using four-point probe, surface photovoltage and spectral response methods identified inadequate doping and high recombination of electron-holes at rear surface as the principal factors responsible for poor backside response. An alternative process based on boron solid source diffusion in combination with POCl3-diffusion has been proposed in order to replace limitations of the Al BSF surface.,PHD | - |
| dc.language.iso | eng | - |
| dc.publisher | UKM, Bangi | - |
| dc.relation | Solar Energy Research Institute / Institut Penyelidikan Tenaga Suria (SERI) | - |
| dc.rights | UKM | - |
| dc.subject | Solar cell | - |
| dc.subject | Solar cells | - |
| dc.title | Silicon bifacial solar cell : simulation, fabrication and performance analysis | - |
| dc.type | theses | - |
| dc.format.pages | 181 | - |
| dc.identifier.callno | TK2960 S844 2014 3 | - |
| dc.identifier.barcode | 000880 | - |
| Appears in Collections: | Solar Energy Research Institute / Institut Penyelidikan Tenaga Suria (SERI) | |
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