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Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/475186
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dc.contributor.authorAkhter Sarkar Mahbub-
dc.date.accessioned2023-10-05T06:37:48Z-
dc.date.available2023-10-05T06:37:48Z-
dc.date.issued1999-
dc.identifier.otherukmvital:2537-
dc.identifier.urihttps://ptsldigital.ukm.my/jspui/handle/123456789/475186-
dc.language.isoeng-
dc.publisherUKM, Bangi-
dc.relationFaculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina-
dc.rightsUKM-
dc.subjectAmorphus semiconductors-
dc.subjectSemiconductors - Characterization-
dc.subjectSilicon-
dc.titlePreparation and characterization of phosphorus doped amorphous silicon for P-I-N photosensor fabrication.-
dc.typeTheses-
dc.identifier.callnoQC611.8.A5A33 1999-
Appears in Collections:Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina

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