Please use this identifier to cite or link to this item:
https://ptsldigital.ukm.my/jspui/handle/123456789/475079| Title: | Kajian tentang ciri-ciri elektrik transistor elektron kelincahan tinggi pseudomorfik (PHEMT) dalam regim nano |
| Authors: | Khairul Nisha Mohd. Kharuddin |
| Keywords: | Field effect transistors Heterojunctions Nanostructures |
| Issue Date: | 2006 |
| Call Number: | TK7871.95.K493 2006 |
| Publisher: | UKM, Bangi |
| URI: | https://ptsldigital.ukm.my/jspui/handle/123456789/475079 |
| Appears in Collections: | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.