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Please use this identifier to cite or link to this item: https://ptsldigital.ukm.my/jspui/handle/123456789/474852
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dc.contributor.authorNuriha Abd. Rahman-
dc.date.accessioned2023-10-05T06:36:36Z-
dc.date.available2023-10-05T06:36:36Z-
dc.date.issued2004-
dc.identifier.otherukmvital:669-
dc.identifier.urihttps://ptsldigital.ukm.my/jspui/handle/123456789/474852-
dc.language.isomay-
dc.publisherUKM, Bangi-
dc.relationFaculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina-
dc.rightsUKM-
dc.subjectField effect transistors-
dc.subjectGallium arsenide-
dc.titlePencampur PHEMT GaAs Untuk Aplikasi Pada 28 GHz dan Berjalur Lebar-
dc.typeTheses-
dc.identifier.callnoTK7871.95.N877 2004-
Appears in Collections:Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina

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