Please use this identifier to cite or link to this item:
https://ptsldigital.ukm.my/jspui/handle/123456789/457548| Title: | Study of tunneling and breakdown mechanisms of gate oxide in MOSFET |
| Authors: | Karim Mohammed Fakhrul |
| Issue Date: | 1996 |
| Call Number: | 4 TK7871.95.K37 1996 |
| Publisher: | UKM, Bangi |
| Appears in Collections: | Faculty of Engineering and Built Environment / Fakulti Kejuruteraan dan Alam Bina |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ukmvital_3210+ABSTRACT+ABSTRACT.0.PDF Restricted Access | 665.56 kB | Adobe PDF |  View/Open | |
| ukmvital_3210+Source+Source.0.PDF Restricted Access | 4.6 MB | Adobe PDF |  View/Open |
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